Title :
Reliability study on pseudomorphic InGaAs power HEMT devices at 60 GHz
Author :
Chen, C.H. ; Saito, Y. ; Yen, H.C. ; Tan, K. ; Onak, G. ; Mancini, J.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A two-temperature RF-stressed accelerated life test on discrete pseudomorphic InGaAs power HEMT devices at 60 GHz shows a failure mode with an activation energy of 1.6 eV. The projected mean time-to-failure of 1 E7 hours at 125/spl deg/C channel temperature indicates that this device technology can be highly reliable for critical applications at millimeter-wave-frequencies.<>
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; life testing; power transistors; semiconductor device testing; solid-state microwave devices; 1.6 eV; 10000000 h; 125 C; 60 GHz; InGaAs; RF-stressed accelerated life test; activation energy; channel temperature; critical applications; device technology; discrete pseudomorphic InGaAs power HEMT devices; failure mode; millimeter-wave-frequencies; projected mean time-to-failure; pseudomorphic InGaAs power HEMT devices; reliability study; HEMTs; Indium gallium arsenide; Life estimation; Life testing; Millimeter wave technology; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335231
