Title :
Millimeter-wave high power amplifiers using pseudomorphic HEMTs
Author :
Sharma, Arvind Kumar ; Onak, G. ; Yamauchi, D. ; Stones, D.I. ; Goel, J. ; Lai, R. ; Tan, K.L.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
Millimeter wave high power amplifier modules operating at V-band have been developed utilizing monolithic amplifiers as building blocks. The two stage amplifiers used in this module provide better that 370 mW output power with compressed gain of 7 dB and greater that 11% power-added-efficiency over the frequency range of 59.5 to 63.5 GHz. These high yielding amplifier utilize 0.15 /spl mu/m passivated T-gate pseudomorphic HEMT fabrication technology. With low loss planar combiners, these modules produced an output power of 740 mW with a power gain of 11.68 dB. These state-of-the-art results represent the highest output power and power gain reported using monolithic amplifiers as building blocks.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; power amplifiers; 0.15 mum; 11 percent; 11.68 dB; 370 mW; 59.5 to 63.5 GHz; 7 dB; 740 mW; InGaAs-AlGaAs-GaAs; V-band; building blocks; compressed gain; frequency range; high yielding amplifier; highest output power; low loss planar combiners; millimeter-wave high power amplifiers; monolithic amplifiers; output power; passivated T-gate pseudomorphic HEMT fabrication technology; power gain; power-added-efficiency; pseudomorphic HEMTs; state-of-the-art results; two stage amplifiers; Fabrication; Frequency; Gain; High power amplifiers; Millimeter wave technology; PHEMTs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335232
