A high-power Q-band PHEMT for communication terminal applications

Author

Smith, P.M. ; Creamer, C.T. ; Kopp, W.F. ; Ferguson, D.W. ; Ho, P. ; Willhite, J.R.

Author_Institution

Martin Marietta Labs., Syracuse, NY, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

809

Abstract

A high-power 0.15 /spl mu/m gate-length pseudomorphic HEMT (PHEMT), developed specifically for high reliability millimeter-wave satellite communication applications, is reported. The device has demonstrated state-of-the-art performance at 44.5 GHz, generating nearly 800 mW output power with 5.8 dB power gain and 25% power-added efficiency, and is designed for operation at low channel temperatures for excellent long-term reliability. The 1800 /spl mu/m gate-width PHEMTs described herein have been produced on 3-inch wafers with high yield and exceptional consistency of high frequency characteristics-for example, five devices sampled from one wafer exhibited output power of 28.94/spl plusmn/0.07 dBm. In addition, data is presented for a 2-stage hybrid amplifier based on the newly developed PHEMTs that is ideally suited to integration into multi-watt Q-band transmitters.<>

Keywords

MMIC; high electron mobility transistors; microwave amplifiers; power amplifiers; reliability; telecommunication equipment; 0.15 mum; 1800 mum; 2-stage hybrid amplifier; 25 percent; 3 in; 44.5 GHz; 5.8 dB; 800 mW; MMICs; communication terminal applications; gate-length; high frequency characteristics; high reliability; high yield; high-power Q-band PHEMT; long-term reliability; low channel temperatures; millimeter-wave satellite communication applications; multi-watt Q-band transmitters; output power; power gain; power-added efficiency; pseudomorphic HEMT; state-of-the-art performance; Frequency; Millimeter wave communication; PHEMTs; Performance gain; Power amplifiers; Power generation; Satellite communication; Temperature; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335233

Filename

335233