Title :
Bonded SOI technologies for high voltage applications
Author :
Abe, Takao ; Katayama, Masatake
Author_Institution :
Shin-Etsu Hondotai, Gunma, Japan
Abstract :
A survey is presented of bonded SOI (BSOI) applications utilizing silicon layers of thickness from 0.1 μm to 60 μm. Description of the fabrication process and properties of standard BSOI is given. For high voltage applications,the various bonded structures and material issues are described and compared to SIMOX (separation by implanted oxygen). New thinning technologies for ultra-thin SOI (<0.1 μm) including recently developed method for separation at an implanted plane are briefly discussed
Keywords :
MOS analogue integrated circuits; electric breakdown; large scale integration; power integrated circuits; silicon-on-insulator; wafer bonding; 0.1 to 60 micron; BSOI; Si; bonded SOI technologies; bonded structures; breakdown voltage; fabrication process; high voltage applications; implanted plane separation; material issues; power ICs; thinning technologies; Conductivity; Costs; Electric breakdown; Fabrication; Glass; Power integrated circuits; Production; Silicon; Voltage; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509446
