Title :
New strategy to improve the mechanical strength and to reduce potential contamination of dielectric materials for double level metal integration
Author :
Assous, M. ; Morand, Y. ; Demolliens, O. ; Berruyer, P. ; Manierre, B. ; Gobil, Y. ; Louis, D. ; Feldis, H. ; Vizioz, C. ; Oman, A.F.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
This work concerns a new strategy for dual damascene Cu/low k integration in order to improve the mechanical strength and to reduce the contamination of the dielectric materials. We introduce the spacer concept in the dual damascene integration scheme with SiLK(R) dielectric. Two materials have been studied as spacers: SiN and TiN. The comparison is based on morphological aspects as well as electrical CD and Kelvin via resistance measurements for different strategies
Keywords :
integrated circuit interconnections; mechanical strength; Kelvin via resistance; SiN; TiN; contamination; dielectric materials; double level metal integration; dual damascene Cu/low k integration; mechanical strength; Cleaning; Contamination; Copper; Dielectric materials; Etching; MOCVD; Plasma applications; Plasma chemistry; Silicon compounds; Tin;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854291
