Title :
One watt Q-Band class A pseudomorphic HEMT MMIC amplifier
Author :
Chen, T.H. ; Chow, P.D. ; Tan, K.L. ; Lester, J.A. ; Zell, G. ; Huang, M.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A broadband monolithic power amplifier has been developed using 0.15 /spl mu/m T-gate pseudomorphic InGaAs HEMT. When biased for class A operation, the amplifier has a measured small signal gain of 12.4 to 13.1 dB in the frequency range of 40 to 46 GHz. Saturated output power of 1.01 watts with 7.03 dB associated gain and 15.1% power-added efficiency at 44.5 GHz has also been measured.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; power amplifiers; 0.15 mum; 1.01 W; 12.4 to 13.1 dB; 15.1 percent; 40 to 46 GHz; 44.5 GHz; 7.03 dB; InGaAs; Q-Band class A pseudomorphic HEMT MMIC amplifier; T-gate pseudomorphic InGaAs HEMT; associated gain; broadband monolithic power amplifier; class A operation; frequency range; measured small signal gain; power-added efficiency; saturated output power; Broadband amplifiers; Frequency measurement; Gain measurement; HEMTs; Indium gallium arsenide; MMICs; Operational amplifiers; PHEMTs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335234
