Author :
Donaton, R.A. ; Iacopi, F. ; Baklanov, M.R. ; Shamiryan, D. ; Coenegrachts, B. ; Struyf, H. ; Lepage, M. ; Meuris, M. ; Van Hove, M. ; Gray, W.D. ; Meynen, H. ; De Roest, D. ; Vanhaelemeersch, S. ; Maex, K.
Abstract :
Physical and electrical characterization of a Dow Corning silsesquioxane-based ultra-low k dielectric is presented. The film properties, such as refractive index, SiH bond density, thermal stability and susceptibility to moisture absorption are investigated as a function of processing conditions. It is shown that exposure of the films to plasma environments results in a change of porosity. A low-K dielectric film with a pore size around 3.5 nm is successfully integrated in 0.2 μm single damascene structures
Keywords :
dielectric thin films; integrated circuit interconnections; plasma materials processing; porosity; refractive index; silicon compounds; thermal stability; 0.2 mum; SiH bond density; moisture absorption; plasma exposure; pore size; porosity; refractive index; silsesquioxane; single damascene structures; thermal stability; ultra-low k dielectric films; Absorption; Bonding; Dielectrics; Moisture; Optical films; Plasma density; Plasma materials processing; Plasma properties; Refractive index; Thermal stability;
