An intelligent power MOSFET with reverse battery protection for automotive applications

Author

Sakamoto, Kozo ; Fuchigami, Nobutaka ; Takagawa, Kyoichi ; Ohtaka, Shigeo

Author_Institution

Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan

fYear

1996

fDate

20-23 May 1996

Firstpage

57

Lastpage

60

Abstract

An intelligent power MOSFET with built-in reverse battery protection, which is essential for automotive power switches, has been developed. The reverse battery protection is achieved without using external control signals. This new power MOSFET can replace the conventional three-terminal power MOSFETs used in automotive applications. Its positive drain breakdown voltage is 71 V and the negative drain current at a drain voltage of -16 V is only -750 μA. On resistance is 170 mΩ. Using the latest fabrication process now available for commercial products, the on-resistance can be reduced to less than 50 m Ω in a TO-220 package

Keywords

automotive electronics; characteristics measurement; electric breakdown; field effect transistor switches; power MOSFET; -16 V; -750 muA; 170 mohm; 71 V; TO-220 package; automotive applications; fabrication process; intelligent power MOSFET; negative drain current; on-resistance; positive drain breakdown voltage; power switches; reverse battery protection; Automotive applications; Automotive engineering; Batteries; Breakdown voltage; Fabrication; Intelligent vehicles; MOSFET circuits; Packaging; Power MOSFET; Protection;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509448

Filename

509448