Title :
An intelligent power MOSFET with reverse battery protection for automotive applications
Author :
Sakamoto, Kozo ; Fuchigami, Nobutaka ; Takagawa, Kyoichi ; Ohtaka, Shigeo
Author_Institution :
Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan
Abstract :
An intelligent power MOSFET with built-in reverse battery protection, which is essential for automotive power switches, has been developed. The reverse battery protection is achieved without using external control signals. This new power MOSFET can replace the conventional three-terminal power MOSFETs used in automotive applications. Its positive drain breakdown voltage is 71 V and the negative drain current at a drain voltage of -16 V is only -750 μA. On resistance is 170 mΩ. Using the latest fabrication process now available for commercial products, the on-resistance can be reduced to less than 50 m Ω in a TO-220 package
Keywords :
automotive electronics; characteristics measurement; electric breakdown; field effect transistor switches; power MOSFET; -16 V; -750 muA; 170 mohm; 71 V; TO-220 package; automotive applications; fabrication process; intelligent power MOSFET; negative drain current; on-resistance; positive drain breakdown voltage; power switches; reverse battery protection; Automotive applications; Automotive engineering; Batteries; Breakdown voltage; Fabrication; Intelligent vehicles; MOSFET circuits; Packaging; Power MOSFET; Protection;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509448
