Title :
Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration
Author :
Shekhawat, G.S. ; Kolosov, O.V. ; Briggs, G.A.D. ; Shaffer, E.O. ; Martin, S.J. ; Geer, R.E.
Author_Institution :
Center for Adv. Thin Film Technol., State Univ. of New York, Albany, NY, USA
Abstract :
A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanoscale mechanical properties of metal/low-k polymer damascence test structures. Metal and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution ⩽10 nm. This technique reveals a RIE-induced hardening of the low-k polymer at the metal/polymer interface and offers new opportunities for metrological reliability evaluation of low-k integration processes
Keywords :
atomic force microscopy; dielectric thin films; integrated circuit interconnections; nanotechnology; polymers; sputter etching; characterization tool; elastic modulus; hardening; low-k dielectric integration; metal/low-k polymer damascence test structures; nanoscale elastic imaging; reactive ion etching; ultrasonic force microscopy; Artificial intelligence; Dielectric constant; Dielectric materials; Integrated circuit interconnections; Metrology; Polymers; Silicon compounds; Surface topography; Testing; Ultrasonic imaging;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854293
