Ku-band high power high efficiency pseudomorphic HEMT

Author

Fu, S.T. ; Lester, L.F. ; Rogers, T.

Author_Institution

Martin Marietta Labs., Syracuse, NY, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

793

Abstract

We report on the record power performance of 0.25 /spl mu/m/spl times/8 mm double recessed GaAs-based Pseudomorphic High Electron Mobility Transistors (PHEMTs) at 12 GHz. When the drain biased voltage (V/sub DS/) was at 8 V, a 5.4 W continuous wave (C.W.) output power was obtained with 10.3 dB power gain, 53% associated power-added efficiency (PAE) and 11.5 dB linear gain. When V/sub DS/ was increased to 9 V, the devices delivered 6.0 W C.W. output power, with 10.8 dB power gain, 52% PAE and 11.5 dB linear gain. To the authors´ knowledge, this is the highest PAE and output power achieved by a single solid state transistor at this frequency. Furthermore, the devices operated efficiently from 3 to 9 V with more than 50% PAE.<>

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; power transistors; solid-state microwave devices; 0.25 micron; 10.3 dB; 10.8 dB; 11.5 dB; 12 GHz; 3 to 9 V; 5.4 W; 52 percent; 53 percent; 6.0 W; 8 mm; CW output power; GaAs; Ku-band; PHEMT; double recessed GaAs-based pseudomorphic HEMT; drain biased voltage; linear gain; power gain; power-added efficiency; solid state transistor; Electron mobility; Frequency; Gain; HEMTs; MODFETs; PHEMTs; Power generation; Solid state circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335237

Filename

335237