DocumentCode
2192459
Title
Characterization and integration of porous extra low-k (XLK) dielectrics
Author
Jin, Changming ; Wetzel, Jeff
Author_Institution
Sematech Inc., Austin, TX, USA
fYear
2000
fDate
2000
Firstpage
99
Lastpage
101
Abstract
Porous XLK dielectric films have been characterized and integrated into one level metal Cu damascene test structures. The material shows reduced dielectric constant as well as lower modulus compared with dense HSQ. Initial one level metal Cu/XLK damascene integration studies demonstrate the feasibility and issues associated with the use of porous low-k materials. Parametric test data show good capacitance and leakage current distributions
Keywords
capacitance; dielectric thin films; integrated circuit interconnections; leakage currents; permittivity; porous materials; Cu; capacitance; dielectric constant; dielectric films; leakage current; one level metal Cu damascene test structures; porous extra low-k dielectrics; Dielectric constant; Dielectric materials; Dielectric thin films; Inorganic materials; Optical films; Phase change materials; Resins; Semiconductor materials; Solvents; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location
Burlingame, CA
Print_ISBN
0-7803-6327-2
Type
conf
DOI
10.1109/IITC.2000.854294
Filename
854294
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