Title :
Characterization and integration of porous extra low-k (XLK) dielectrics
Author :
Jin, Changming ; Wetzel, Jeff
Author_Institution :
Sematech Inc., Austin, TX, USA
Abstract :
Porous XLK dielectric films have been characterized and integrated into one level metal Cu damascene test structures. The material shows reduced dielectric constant as well as lower modulus compared with dense HSQ. Initial one level metal Cu/XLK damascene integration studies demonstrate the feasibility and issues associated with the use of porous low-k materials. Parametric test data show good capacitance and leakage current distributions
Keywords :
capacitance; dielectric thin films; integrated circuit interconnections; leakage currents; permittivity; porous materials; Cu; capacitance; dielectric constant; dielectric films; leakage current; one level metal Cu damascene test structures; porous extra low-k dielectrics; Dielectric constant; Dielectric materials; Dielectric thin films; Inorganic materials; Optical films; Phase change materials; Resins; Semiconductor materials; Solvents; Testing;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854294
