Title :
Frequency tripler with integrated back-to-back barrier-n-n/sup +/ (bbBNN) varactor diodes in a novel split-waveguide block at 220 GHz
Author :
Choudhury, D. ; Raisanen, A.V. ; Smith, R.P. ; Martin, S.C. ; Oswald, J.E. ; Dengler, R.J. ; Frerking, M.A. ; Siegel, P.H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A frequency tripler has been developed using an integrated planar back-to-back barrier-n-n/sup +/ (bbBNN) varactor device in a waveguide mount at 220 GHz. The multiplier is based on a novel split-waveguide block design and a new fully integrated planar device architecture. Planar GaAs bbBNN devices have been combined with quartz microstrip filters in a wafer level circuit integration process. A flange-to-flange tripling efficiency of 5%, the highest yet reported from a bbBNN structure at this frequency, has been obtained. Details of the device fabrication process, block design and measured performance are presented.<>
Keywords :
III-V semiconductors; frequency multipliers; gallium arsenide; semiconductor diodes; solid-state microwave devices; varactors; waveguide components; 220 GHz; 5 percent; GaAs; GaAs bbBNN devices; back-to-back barrier-n-n/sup +/ varactor diodes; device fabrication; flange-to-flange tripling efficiency; frequency tripler; integrated planar device; quartz microstrip filters; split-waveguide block design; wafer level circuit integration; waveguide mount; Fabrication; Frequency; Gallium arsenide; Integrated circuit measurements; Microstrip filters; Planar waveguides; Process design; Varactors;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335242
