DocumentCode :
2192632
Title :
Investigation of the roles of the additive components for second generation copper electroplating chemistries used for advanced interconnect metalization
Author :
Mikkola, Robert D. ; Chen, Linlin
Author_Institution :
Sematech Inc., Austin, TX, USA
fYear :
2000
fDate :
2000
Firstpage :
117
Lastpage :
119
Abstract :
This paper discusses the effects of the emerging second generation copper electrochemical deposition (ECD) bath additives on the fill mechanism for advanced interconnect trenches. The role of the accelerator (organic disulfides) and suppressor (polymers) for a two component additive package was evaluated. In addition the effects of the polymer-Cl interaction on the fill mechanism as a function of chloride ion concentration was explored. SEM cross sections of partially filled electroplated copper trenches show a two stage fill mechanism consisting of (1) conformal fill followed by (2) bottom-up fill. It was determined that the polymer-Cl complex plays a critical role during the initial stages of fill for sub one-micron trenches
Keywords :
copper; electroplating; metallisation; scanning electron microscopy; Cu; SEM; accelerator; additive component; chloride ion concentration; copper electroplating; electrochemical deposition; interconnect metallization; organic disulfide; polymer; polymer-Cl complex; suppressor; trench filling; Accelerated aging; Additives; Chemistry; Copper; Current density; Ion accelerators; Packaging; Polymer films; Process control; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
Type :
conf
DOI :
10.1109/IITC.2000.854299
Filename :
854299
Link To Document :
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