Title :
Experimental verification of large current capability of lateral IEGTs on SOI
Author :
Yasuhara, Norio ; Funaki, Hideyuki ; Matsudai, Tomoko ; Nakagawa, Akio
Author_Institution :
Mater. & Devices Res. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
This paper reports, for the first time, the experimentally obtained electrical characteristics of lateral injection enhanced insulated gate bipolar transistors (LIEGTs) on SOI. It is shown that optimized LIEGTs have twice as large a current capability as LIGBTs and attain the same turn-off characteristics. These results show that LIEGTs are attractive for the output devices of high voltage power ICs
Keywords :
insulated gate bipolar transistors; silicon-on-insulator; SOI; current capability; electrical characteristics; high voltage power IC; lateral IEGT; lateral injection enhanced insulated gate bipolar transistor; turn-off characteristics; Conductivity; Dielectrics; Electric variables; Insulated gate bipolar transistors; Isolation technology; Laboratories; Numerical simulation; Power integrated circuits; Silicon compounds; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509457
