Title :
High voltage lateral MOS thyristor cascode switch on SOI-safe operating area of SOI-Resurf devices
Author :
Funaki, Hideyuki ; Yasuhara, Norio ; Nakagawa, Aluo
Author_Institution :
Mater. & Devices Res. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
A high voltage lateral MOS thyristor cascode switch on SOI was proposed. It consists of a high voltage MOS thyristor, a low voltage MOSFET and a pn diode. Excellent on-state and switching characteristics were numerically and experimentally obtained. The safe operating area (SOA) of SOI-Resurf devices were discussed
Keywords :
MOS-controlled thyristors; power semiconductor switches; silicon-on-insulator; SOI Resurf device; high voltage lateral MOS thyristor cascode switch; safe operating area; Anodes; Breakdown voltage; Diodes; Equivalent circuits; Low voltage; MOSFET circuits; Material storage; Switches; Switching circuits; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509458
