DocumentCode
2192686
Title
High voltage lateral MOS thyristor cascode switch on SOI-safe operating area of SOI-Resurf devices
Author
Funaki, Hideyuki ; Yasuhara, Norio ; Nakagawa, Aluo
Author_Institution
Mater. & Devices Res. Lab., Toshiba Corp., Kawasaki, Japan
fYear
1996
fDate
20-23 May 1996
Firstpage
101
Lastpage
104
Abstract
A high voltage lateral MOS thyristor cascode switch on SOI was proposed. It consists of a high voltage MOS thyristor, a low voltage MOSFET and a pn diode. Excellent on-state and switching characteristics were numerically and experimentally obtained. The safe operating area (SOA) of SOI-Resurf devices were discussed
Keywords
MOS-controlled thyristors; power semiconductor switches; silicon-on-insulator; SOI Resurf device; high voltage lateral MOS thyristor cascode switch; safe operating area; Anodes; Breakdown voltage; Diodes; Equivalent circuits; Low voltage; MOSFET circuits; Material storage; Switches; Switching circuits; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location
Maui, HI
ISSN
1063-6854
Print_ISBN
0-7803-3106-0
Type
conf
DOI
10.1109/ISPSD.1996.509458
Filename
509458
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