Title :
Chair-barrier varactors on GaAs for frequency triplers
Author :
Krishnamurthi, K. ; Harrison, R.G. ; Liu, H.C. ; Buchanan, M. ; Wasilewski, Z.R. ; Thompson, J.R.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
Earlier single-barrier varactors (SBV) had low Q because of leaky barriers. By placing a thin AlAs layer in the center of an Al/sub 0.4/Ga/sub 0.8/As barrier and using In/sub 0.2/Ga/sub 0.8/As spacers we increase the effective barrier height, thereby achieving SBVs with both high Q and good capacitance-modulation characteristics.<>
Keywords :
III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; leakage currents; solid-state microwave devices; varactors; Al/sub 0.4/Ga/sub 0.8/As; Al/sub 0.4/Ga/sub 0.8/As barrier; GaAs; In/sub 0.2/Ga/sub 0.8/As; In/sub 0.2/Ga/sub 0.8/As spacers; MM wave frequency triplers; chair-barrier varactors; effective barrier height; frequency triplers; good capacitance-modulation characteristics; high Q; leaky barriers; single-barrier varactors; thin AlAs layer; Capacitance-voltage characteristics; Frequency; Gallium arsenide; Varactors;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335250
