Title :
Ultralow k SiO2 thin films with nano-voids by gas-evaporation technique
Author :
Nozaki, Shinji ; Banerjee, Souri ; Uchida, Kazuo ; Ono, Hiroshi ; Morisaki, Hiroshi
Author_Institution :
Dept. of Electron. Eng., Univ. of Electro-Commun., Chofu, Japan
Abstract :
We have developed the gas evaporation technique to deposit ultralow-k (as low as 1.7) SiO2 thin films with nanometer-size voids. In the technique silicon (Si) in a boat was evaporated in argon gas containing a small amount of oxygen. Although the film contains many nanometer-size voids, it is tolerant of moisture and does not show a change in the dielectric constant or the resistance with time. The SiO2 film deposited by the gas evaporation technique is a good candidate for a low-k dielectric in the future Si VLSI
Keywords :
VLSI; dielectric thin films; infrared spectra; permittivity; silicon compounds; vacuum deposition; voids (solid); FTIR spectra; SiO2; VLSI; dielectric constant; gas-evaporation; nano-voids; thin films; ultralow-k films; Capacitance measurement; Dielectric constant; Dielectric measurements; Dielectric thin films; Leakage current; Rough surfaces; Semiconductor thin films; Sputtering; Surface roughness; Transistors;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854305
