Design and characterization of shorted gate FinFET for low power circuits

This paper represents a comprehensive analysis of characteristics of shorted gate Fin Field Effect Transistor (FinFET). Multi-gate devices are more and more desired in high performance digital circuits and systems. These have added advantages of high speed, higher packaging density on chips, low power operations and reduced area on chips. Non planar Complementary Metal Oxide Semiconductor (CMOS) devices, such as FinFETs, are promising for 22 nm or smaller technology. The fabrication process of FinFETs is much similar to that of planar CMOS transistor. FinFETs are better on leakage current management, short channel effects and perform well at subthreshold region. These have smaller threshold leading to faster operation. A novel FinFET device is designed using Electronic Design Automation (EDA) tools and subsequently characterized for various performance variables in this paper.