A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures

Author

Agarwal, Anant K. ; Siergiej, R.R. ; Seshadri, S. ; White, M.H. ; McMullin, P.G. ; Burk, A.A. ; Rowland, L.B. ; Brandt, C.D. ; Hopkins, R.H.

Author_Institution

Westinghouse Sci. & Technol. Center, Pittsburgh, PA, USA

fYear

1996

fDate

20-23 May 1996

Firstpage

119

Lastpage

122

Abstract

A realistic performance projection of 4H-SiC UMOSFET structures based on electric field in the gate insulator consistent with long-term reliability of insulator is provided for the breakdown voltage in the range of 600 to 1500 V. The use of P⁺ polysilicon gate leads to higher breakdown voltage as the Fowler Nordheim injection from the gate electrode is reduced. It is concluded that the insulator reliability is the limiting factor and therefore the high temperature operation of these devices may not be practical

Keywords

power MOSFET; semiconductor device reliability; semiconductor materials; silicon compounds; 4H-SiC power UMOSFET; 600 to 1500 V; Fowler Nordheim injection; P⁺ polysilicon gate; SiC; breakdown voltage; electric field; gate insulator reliability; high temperature operation; Dielectric breakdown; Dielectrics and electrical insulation; Electric breakdown; Electrodes; Electrons; Interface states; Power electronics; Silicon carbide; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509462

Filename

509462