Title :
A super low-k (k=1.1) silica aerogel film using supercritical drying technique
Author :
Kawakami, Nobuyuki ; Fukumoto, Y. Oshito ; Kinoshita, Takashi ; Suzuki, Kohei ; Inoue, Ken-ichi
Author_Institution :
Electron. Res. Lab., Kobe Steel Ltd., Japan
Abstract :
A porous silica aerogel film as low-k dielectric is demonstrated for the first time. An “on-wafer” gelation technique in ammonium hydroxide vapor is developed to enhance the process compatibility with the conventional spin-on dielectric process in ULSI technology. By using a supercritical drying process, which is free from capillary forces, a high porosity aerogel film with a k value of 1.1 is obtained
Keywords :
ULSI; aerogels; dielectric thin films; leakage currents; permittivity; porosity; porous materials; silicon compounds; sol-gel processing; SiO2; ULSI technology; low-k dielectrics; on-wafer gelation; porous film; silica aerogel film; supercritical drying technique; Dielectric constant; Dielectric materials; Ethanol; Fabrication; Moisture; Silicon compounds; Stress; Temperature; Transistors; Ultra large scale integration;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854306
