2nd generation dual gate MOS thyristor

2nd generation dual gate MOS thyristor (2nd gen.-DGMOS) with 900 V blocking capability are presented to realize an extremely excellent trade-off characteristic between an on-state voltage drop and a turn-off loss with a high turn-off capability and to overcome the IGBT´s characteristics for the first time. A superior on-state voltage drop (Von) of 1.29 V at 10 A(71.3 A/cm²) with the turn-off loss (Eoff) of 101 μJ is successfully achieved. These values of Von, Eoff indicate the much superior trade-off characteristic to the IGBT. Furthermore, it should be noted that the 2nd gen.-DGMOS achieves better turn-off capability of approximately 500 A/cm² in a voltage resonant circuit, which is 3.0 times higher than that of the conventional DGMOS