DocumentCode :
2192841
Title :
2nd generation dual gate MOS thyristor
Author :
Iwamuro, Noriyuki ; Harada, Y. ; Iwaana, Tadzyoshi ; Hoshi, Yasuyuk I. ; Seki, Yasukazu
Author_Institution :
Adv. Device Technol. Lab., Fuji Electr. Corp. Res. & Dev. Ltd., Nagano, Japan
fYear :
1996
fDate :
20-23 May 1996
Firstpage :
129
Lastpage :
132
Abstract :
2nd generation dual gate MOS thyristor (2nd gen.-DGMOS) with 900 V blocking capability are presented to realize an extremely excellent trade-off characteristic between an on-state voltage drop and a turn-off loss with a high turn-off capability and to overcome the IGBT´s characteristics for the first time. A superior on-state voltage drop (Von) of 1.29 V at 10 A(71.3 A/cm2) with the turn-off loss (Eoff) of 101 μJ is successfully achieved. These values of Von, Eoff indicate the much superior trade-off characteristic to the IGBT. Furthermore, it should be noted that the 2nd gen.-DGMOS achieves better turn-off capability of approximately 500 A/cm2 in a voltage resonant circuit, which is 3.0 times higher than that of the conventional DGMOS
Keywords :
MOS-controlled thyristors; 2nd generation dual gate MOS thyristor; 900 V; blocking capability; on-state voltage drop; trade-off characteristic; turn-off loss; voltage resonant circuit; Character generation; Control systems; Electrodes; Insulated gate bipolar transistors; MOSFET circuits; Motor drives; Power electronics; RLC circuits; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
ISSN :
1063-6854
Print_ISBN :
0-7803-3106-0
Type :
conf
DOI :
10.1109/ISPSD.1996.509464
Filename :
509464
Link To Document :
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