Title :
Tungsten via poisoning caused by water trapped in embedded organic low-K dielectrics
Author :
Ikeda, Koichi ; Hasegawa, Toshiaki ; Tokunaga, Kazuhiro ; Fukasawa, Masanaga ; Kito, Hideyuki ; Miyamoto, Takaaki ; Kadomura, Shingo
Author_Institution :
LSI Bus. & Technol. Dev. Group, Sony Corp., Kanagawa, Japan
Abstract :
The control of hygroscopicity in dielectric films is one of the key technologies applied in the fabrication of multilevel interconnections. By experiment we identified a new water trap site formation in a silicon dioxide hard mask deposited on organic low-K film. The trapped water causes via poisoning of the organic low-K application in aluminum interconnections with tungsten electrodes. We showed that by inserting an out-gassing step and using a chemically formed film we can avoid this problem
Keywords :
dielectric thin films; integrated circuit interconnections; organic compounds; outgassing; tungsten; Al; SiO2; W; aluminum interconnection; embedded organic low-K dielectric film; hygroscopicity; multilevel interconnection; outgassing; silicon dioxide hard mask; tungsten electrode; via poisoning; water trapping; Copper; Delay; Dielectric films; Dielectric measurements; Electrodes; Filling; Integrated circuit interconnections; Optical films; Tungsten; Wire;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854311
