Tungsten via poisoning caused by water trapped in embedded organic low-K dielectrics

Author

Ikeda, Koichi ; Hasegawa, Toshiaki ; Tokunaga, Kazuhiro ; Fukasawa, Masanaga ; Kito, Hideyuki ; Miyamoto, Takaaki ; Kadomura, Shingo

Author_Institution

LSI Bus. & Technol. Dev. Group, Sony Corp., Kanagawa, Japan

fYear

2000

fDate

2000

Firstpage

158

Lastpage

160

Abstract

The control of hygroscopicity in dielectric films is one of the key technologies applied in the fabrication of multilevel interconnections. By experiment we identified a new water trap site formation in a silicon dioxide hard mask deposited on organic low-K film. The trapped water causes via poisoning of the organic low-K application in aluminum interconnections with tungsten electrodes. We showed that by inserting an out-gassing step and using a chemically formed film we can avoid this problem

Keywords

dielectric thin films; integrated circuit interconnections; organic compounds; outgassing; tungsten; Al; SiO₂; W; aluminum interconnection; embedded organic low-K dielectric film; hygroscopicity; multilevel interconnection; outgassing; silicon dioxide hard mask; tungsten electrode; via poisoning; water trapping; Copper; Delay; Dielectric films; Dielectric measurements; Electrodes; Filling; Integrated circuit interconnections; Optical films; Tungsten; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854311

Filename

854311