• DocumentCode
    2192935
  • Title

    A fully resurfed, BiCMOS-compatible, high voltage MOS transistor

  • Author

    Liu, Min ; Salama, C.A.T. ; Schvan, P. ; King, Matthew

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
  • fYear
    1996
  • fDate
    20-23 May 1996
  • Firstpage
    143
  • Lastpage
    146
  • Abstract
    In this paper a fully resurfed, high voltage MOS structure compatible with submicron BiCMOS technology is proposed and implemented. The device is junction-isolated and is therefore suitable for high-side drive applications. Using this structure, the resurf condition in the device can be optimized without altering the well regions. Devices with breakdown voltages over 200 V and specific on-resistances on the order of 20 mΩ·cm2 were obtained
  • Keywords
    BiCMOS integrated circuits; power MOSFET; 200 V; breakdown voltage; fully resurfed high voltage MOS transistor; high-side drive applications; junction isolation; specific on-resistance; submicron BiCMOS technology; BiCMOS integrated circuits; CMOS integrated circuits; Costs; Electric breakdown; Isolation technology; Low voltage; MOS devices; MOSFETs; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
  • Conference_Location
    Maui, HI
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-3106-0
  • Type

    conf

  • DOI
    10.1109/ISPSD.1996.509467
  • Filename
    509467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2192935