Title :
A fully resurfed, BiCMOS-compatible, high voltage MOS transistor
Author :
Liu, Min ; Salama, C.A.T. ; Schvan, P. ; King, Matthew
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
In this paper a fully resurfed, high voltage MOS structure compatible with submicron BiCMOS technology is proposed and implemented. The device is junction-isolated and is therefore suitable for high-side drive applications. Using this structure, the resurf condition in the device can be optimized without altering the well regions. Devices with breakdown voltages over 200 V and specific on-resistances on the order of 20 mΩ·cm2 were obtained
Keywords :
BiCMOS integrated circuits; power MOSFET; 200 V; breakdown voltage; fully resurfed high voltage MOS transistor; high-side drive applications; junction isolation; specific on-resistance; submicron BiCMOS technology; BiCMOS integrated circuits; CMOS integrated circuits; Costs; Electric breakdown; Isolation technology; Low voltage; MOS devices; MOSFETs; Substrates; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509467
