DocumentCode :
2192953
Title :
Equivalent constriction resistance measured with the low dc voltage method under the influence of fritting phenomena
Author :
Takano, Eisuke
fYear :
2005
fDate :
26-28 Sept. 2005
Firstpage :
284
Lastpage :
290
Abstract :
The purpose of this paper is to show that the equivalent constriction resistance (Rc) was discriminated from the equivalent film resistance (Rf) for Ag-Ag and Cu-Cu contacts by measuring with the proposed low-dc-voltages (LDcV) method before and after frittings (A-fritting and B-fritting) at the contacts. The Rc data made it possible to estimate the essential dimensions of contact area i.e. its a-spot radius and film resistivity. It was detected with this method that not only the Rc but also the Rf were decreased with the B-frittings. The independent measurements for contact resistances with the B-frittings also proved that a thin film existed in a part of effective conducting area. The stability in the contact resistance was improved with a weak fritting, that is effective in making fewer errors for Rc measurement.
Keywords :
contact resistance; copper; electrical contacts; silver; thin films; AgCu; after fritting; before fritting; constriction resistance; contact area; contact resistances; equivalent film resistance; fritting phenomena; low dc voltage method; thin film; weak fritting; Battery charge measurement; Breakdown voltage; Conductivity; Contact resistance; Electrical resistance measurement; Insulation; Low voltage; Pollution measurement; Transistors; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Contacts, 2005. Proceedings of the Fifty-First IEEE Holm Conference on
Print_ISBN :
0-7803-9113-6
Type :
conf
DOI :
10.1109/HOLM.2005.1518258
Filename :
1518258
Link To Document :
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