DocumentCode :
2192989
Title :
The behaviour of very high current density power MOSFETs
Author :
Evans, Jonathan ; Amaratunga, Gehan
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fYear :
1996
fDate :
20-23 May 1996
Firstpage :
157
Lastpage :
160
Abstract :
This paper presents a new description of the operation of a power MOSFET which is aimed at assisting in the design of devices which operate at high current densities. We analyse the charge balances within a power MOSFET (DMOS or UMOS) and show how these conspire to dictate the operation of the device. We report on the manufacture of a UMOS device with 0.8 μm cells with 0.4 μm trench widths=540×106 cells/in2
Keywords :
current density; power MOSFET; DMOS device; UMOS device; charge balance; current density; power MOSFET; Capacitance; Current density; Doping; Electrodes; Electrons; Geometry; MOSFETs; P-n junctions; Space charge; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
ISSN :
1063-6854
Print_ISBN :
0-7803-3106-0
Type :
conf
DOI :
10.1109/ISPSD.1996.509470
Filename :
509470
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2192989
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