DocumentCode
2193010
Title
Future trends in local lifetime control [power semiconductor devices]
Author
Vobecky, J. ; Hazdra, P.
Author_Institution
Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic
fYear
1996
fDate
20-23 May 1996
Firstpage
161
Lastpage
164
Abstract
Energy and dose mixing concept, applied in ion irradiation technology for local lifetime tailoring, is shown to be capable of creating a customer-specific lifetime profile. The electrical parameters of power diode, subjected to the new ion irradiation concept, are compared with those ones resulting from the energy dispersed alpha particle irradiation
Keywords
alpha-particle effects; carrier lifetime; ion implantation; minority carriers; power semiconductor devices; power semiconductor diodes; alpha particle irradiation; customer-specific lifetime profile; electrical parameters; energy/dose mixing concept; ion irradiation technology; local lifetime control; power diode irradiation; power semiconductor devices; Alpha particles; Diodes; Electrons; Gold; Helium; Platinum; Protons; Shape; Silicon; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location
Maui, HI
ISSN
1063-6854
Print_ISBN
0-7803-3106-0
Type
conf
DOI
10.1109/ISPSD.1996.509471
Filename
509471
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