Title :
Recent Development of Magnetic Resonance Electrical Impedance Tomography toward High-Resolution Conductivity Imaging
Author_Institution :
Kyung Hee Univ., Seoul
Abstract :
Magnetic resonance electrical impedance tomography (MREIT) has been lately developed for high-resolution imaging of an electrical conductivity distribution inside the human body. In MREIT, we can avoid the inherent ill-posedness of the conductivity image reconstruction problem in electrical impedance tomography (EIT) by combining it with the current-injection MRI technique. MREIT utilizes an MRI scanner to measure internal magnetic flux density data induced by externally injected currents and produces multi-slice conductivity images with almost the same spatial resolution of conventional MR images. After the original ideas on MREIT in early 1990s, there has been rapid progress in its theory, algorithm, and experimental techniques. This paper reviews MREIT from the basics to the most recent research outcomes. It is expected that MREIT will be able to produce high-resolution conductivity images of the human body within one year. Suggesting future research directions, possible applications in biomedicine, biology, chemistry, and material science will be discussed.
Keywords :
bioelectric phenomena; biomedical MRI; electric impedance imaging; image resolution; MRI scanner; current-injection MRI; electrical conductivity distribution; electrical impedance tomography; high-resolution imaging; internal magnetic flux density; magnetic resonance electrical impedance tomography; multislice conductivity images; spatial resolution; Biomedical measurements; Conductivity; Density measurement; High-resolution imaging; Humans; Image reconstruction; Impedance; Magnetic resonance; Magnetic resonance imaging; Tomography;
Conference_Titel :
Noninvasive Functional Source Imaging of the Brain and Heart and the International Conference on Functional Biomedical Imaging, 2007. NFSI-ICFBI 2007. Joint Meeting of the 6th International Symposium on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4244-0949-5
Electronic_ISBN :
978-1-4244-0949-5
DOI :
10.1109/NFSI-ICFBI.2007.4387728