• DocumentCode
    2193042
  • Title

    RF power amplifiers for portable communication applications

  • Author

    Stengel, B. ; Nair, V.

  • Author_Institution
    Land Mobile Products Res. Lab., Motorola Inc., Plantation, FL, USA
  • fYear
    1994
  • fDate
    23-27 May 1994
  • Firstpage
    1623
  • Abstract
    We review the requirements of a power amplifier used in portable communication applications. The talk time or battery life of a portable unit is directly related to the transmitter RF conversion efficiency. The introduction of GaAs MESFETs, HFETs, and HBTs into portable communications equipment increased the performance level of RF power functions. The effect is a significant improvement in DC to RF conversion efficiency over the previous bipolar RF power amplifiers. Circuit applications and trade-off of MESFETs, HFETs and HBTs for portable communication system is also discussed.<>
  • Keywords
    heterojunction bipolar transistors; mobile radio systems; power amplifiers; radiofrequency amplifiers; DC to RF conversion efficiency; GaAs MESFETs; HBTs; HFETs; RF power amplifiers; battery life; portable communication applications; talk time; transmitter RF conversion efficiency; Batteries; Communication equipment; Gallium arsenide; HEMTs; MESFETs; MODFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transmitters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1994., IEEE MTT-S International
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-1778-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.1994.335262
  • Filename
    335262