DocumentCode :
2193042
Title :
RF power amplifiers for portable communication applications
Author :
Stengel, B. ; Nair, V.
Author_Institution :
Land Mobile Products Res. Lab., Motorola Inc., Plantation, FL, USA
fYear :
1994
fDate :
23-27 May 1994
Firstpage :
1623
Abstract :
We review the requirements of a power amplifier used in portable communication applications. The talk time or battery life of a portable unit is directly related to the transmitter RF conversion efficiency. The introduction of GaAs MESFETs, HFETs, and HBTs into portable communications equipment increased the performance level of RF power functions. The effect is a significant improvement in DC to RF conversion efficiency over the previous bipolar RF power amplifiers. Circuit applications and trade-off of MESFETs, HFETs and HBTs for portable communication system is also discussed.<>
Keywords :
heterojunction bipolar transistors; mobile radio systems; power amplifiers; radiofrequency amplifiers; DC to RF conversion efficiency; GaAs MESFETs; HBTs; HFETs; RF power amplifiers; battery life; portable communication applications; talk time; transmitter RF conversion efficiency; Batteries; Communication equipment; Gallium arsenide; HEMTs; MESFETs; MODFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transmitters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-1778-5
Type :
conf
DOI :
10.1109/MWSYM.1994.335262
Filename :
335262
Link To Document :
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