• DocumentCode
    2193084
  • Title

    Picosecond ultrasonic study of the electrical and mechanical properties of CoSi2 formed under Ti and TiN cap layers

  • Author

    Stoner, Robert ; Tas, Guray ; Morath, Chris ; Maris, Humphrey ; Chen, Lee-Jen ; Chuang, Haw-Feng ; Huang, Chi-Tung ; Hwang, Yaw-Lin

  • Author_Institution
    Brown Univ., Providence, RI, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    179
  • Lastpage
    181
  • Abstract
    We report noncontact measurements of CoSi2 layers made using a commercial picosecond ultrasonic system. The layers were formed in a two step RTP-process beginning with samples with nominally 120 Å Co capped with either 150 Å PVD TiN, or 100 Å PVD Ti. The thickness, roughness and electrical resistivity of the final disilicide layers were investigated as functions of the first anneal temperature. The results indicate that the TiN-capped process yields a significantly smoother and more conductive disilicide film than the Ti-capped process over a wide range of first anneal temperatures
  • Keywords
    cobalt compounds; dielectric thin films; electrical resistivity; rapid thermal annealing; ultrasonic materials testing; CoSi2; Ti; TiN; cap layers; disilicide layers; electrical resistivity; noncontact measurements; picosecond ultrasonic system; roughness; thickness; two step RTP-process; Annealing; Conductive films; Mechanical factors; Optical films; Optical pulses; Pulse measurements; Substrates; Temperature; Tin; Ultrasonic variables measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    0-7803-6327-2
  • Type

    conf

  • DOI
    10.1109/IITC.2000.854318
  • Filename
    854318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2193084