Title :
Picosecond ultrasonic study of the electrical and mechanical properties of CoSi2 formed under Ti and TiN cap layers
Author :
Stoner, Robert ; Tas, Guray ; Morath, Chris ; Maris, Humphrey ; Chen, Lee-Jen ; Chuang, Haw-Feng ; Huang, Chi-Tung ; Hwang, Yaw-Lin
Author_Institution :
Brown Univ., Providence, RI, USA
Abstract :
We report noncontact measurements of CoSi2 layers made using a commercial picosecond ultrasonic system. The layers were formed in a two step RTP-process beginning with samples with nominally 120 Å Co capped with either 150 Å PVD TiN, or 100 Å PVD Ti. The thickness, roughness and electrical resistivity of the final disilicide layers were investigated as functions of the first anneal temperature. The results indicate that the TiN-capped process yields a significantly smoother and more conductive disilicide film than the Ti-capped process over a wide range of first anneal temperatures
Keywords :
cobalt compounds; dielectric thin films; electrical resistivity; rapid thermal annealing; ultrasonic materials testing; CoSi2; Ti; TiN; cap layers; disilicide layers; electrical resistivity; noncontact measurements; picosecond ultrasonic system; roughness; thickness; two step RTP-process; Annealing; Conductive films; Mechanical factors; Optical films; Optical pulses; Pulse measurements; Substrates; Temperature; Tin; Ultrasonic variables measurement;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854318
