Title :
CVD copper thin film deposition by using (1-pentene)Cu(I)(hfac)
Author :
Zhuang, Wei Wei ; Charneski, Lawrence J. ; Evans, David R. ; Hsu, Sheng Teng
Author_Institution :
Sharp Labs. of America, Camas, WA, USA
Abstract :
Pure copper thin films have been deposited on both TiN and TaN substrates via CVD process by using a new volatile copper precursor, (1-pentene)Cu(I)(hfac). The effect of CVD process conditions on film properties has been investigated. The copper nucleus size is about 200 Å. The results indicate that both high deposition rate and low resistivity of copper thin films can be obtained by using (1-pentene)Cu(I)(hfac)
Keywords :
CVD coatings; copper; integrated circuit interconnections; integrated circuit metallization; metallic thin films; (1-pentene)Cu(I)(hfac); CVD Cu thin film deposition; Cu; high deposition rate; low resistivity; Atherosclerosis; Chemical technology; Chemical vapor deposition; Conductivity; Copper; Laboratories; Sputtering; Substrates; Tin; Transistors;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854320
