DocumentCode
2193129
Title
CVD copper thin film deposition by using (1-pentene)Cu(I)(hfac)
Author
Zhuang, Wei Wei ; Charneski, Lawrence J. ; Evans, David R. ; Hsu, Sheng Teng
Author_Institution
Sharp Labs. of America, Camas, WA, USA
fYear
2000
fDate
2000
Firstpage
185
Lastpage
187
Abstract
Pure copper thin films have been deposited on both TiN and TaN substrates via CVD process by using a new volatile copper precursor, (1-pentene)Cu(I)(hfac). The effect of CVD process conditions on film properties has been investigated. The copper nucleus size is about 200 Å. The results indicate that both high deposition rate and low resistivity of copper thin films can be obtained by using (1-pentene)Cu(I)(hfac)
Keywords
CVD coatings; copper; integrated circuit interconnections; integrated circuit metallization; metallic thin films; (1-pentene)Cu(I)(hfac); CVD Cu thin film deposition; Cu; high deposition rate; low resistivity; Atherosclerosis; Chemical technology; Chemical vapor deposition; Conductivity; Copper; Laboratories; Sputtering; Substrates; Tin; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location
Burlingame, CA
Print_ISBN
0-7803-6327-2
Type
conf
DOI
10.1109/IITC.2000.854320
Filename
854320
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