• DocumentCode
    2193142
  • Title

    An observation of large and long current pulses below the breakdown voltage of PIN diode

  • Author

    Takata, Ikunori

  • Author_Institution
    Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki, Japan
  • fYear
    1996
  • fDate
    20-23 May 1996
  • Firstpage
    181
  • Lastpage
    184
  • Abstract
    PIN diodes with high resistive n-layer exhibit very interesting pulses, whose lengths are 10 μs-2 s and heights are 0.001~0.25 A/cm 2 below and above the avalanche breakdown voltage (≈1400 V). Especially, large pulses (0.1~0.25 A/cm2) occurred at ≈100 V lower voltage than the avalanche breakdown. In these operations, breakdown currents prefer some discrete values not depending on the applied voltage directly. To consider these phenomena, the author proposes a new idea that there was a stable high current density operation (1A/cm2 order) near the avalanche breakdown voltage
  • Keywords
    avalanche breakdown; current density; p-i-n diodes; 10 mus to 2 s; 1400 V; PIN diode; avalanche breakdown voltage; breakdown currents; current pulses; high resistive n-layer; stable high current density operation; Atomic layer deposition; Avalanche breakdown; Breakdown voltage; Current measurement; Diodes; Plasma waves; Platinum; Power supplies; Pulse measurements; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
  • Conference_Location
    Maui, HI
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-3106-0
  • Type

    conf

  • DOI
    10.1109/ISPSD.1996.509476
  • Filename
    509476