Multi-megahertz pulse width modulation converters with improved 1 μm p-channel metal oxide semiconductor transistors

Author

Fowler, Tom ; Kollman, Robert ; Efland, Taylor ; Skelton, Dale

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1996

fDate

20-23 May 1996

Firstpage

185

Lastpage

188

Abstract

Pulse width modulation (PWM) techniques have been limited to 1 to 2 MHz by the switching speeds of currently available power switches. This limitation has been overcome by high speed (<2 nanosecond) switching with improved 1 μm PMOS transistors. These devices have been incorporated in a 5 MHz, PWM buck power stage that has demonstrated good efficiency (>85%) and very high power density (500 W/in³ versus state-of-the-art 100 W/in³)

Keywords

PWM power convertors; field effect transistor switches; power MOSFET; power field effect transistors; power semiconductor switches; 1 micron; 2 ns; 5 MHz; 85 percent; PMOS transistors; PMOSFETs; PWM buck power stage; high speed switching; multimegahertz PWM converters; p-channel MOSFET; pulse width modulation converters; Filters; Instruments; Parasitic capacitance; Power supplies; Pulse width modulation; Pulse width modulation converters; Switching circuits; Switching frequency; Switching loss; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509477

Filename

509477