Title :
Experimental investigation of high voltage and high current gain of a lateral bipolar transistor based on a lateral DMOS structure
Author :
Shibib, M. Ayman
Author_Institution :
Bell Labs., Lucent Technol. Inc., Reading, PA, USA
Abstract :
Experimental results of a lateral high voltage NPN transistor based on a lateral DMOS structure fabricated in a low cost power BiCMOS technology are presented. Common-emitter current gain of typical devices were about 300 for the lateral devices compared to about 100 for a vertical device. The lateral NPN devices had emitter to collector breakdown voltages of 30 and 70 volts depending on the length of the collector region
Keywords :
BiCMOS integrated circuits; electric breakdown; power bipolar transistors; power integrated circuits; 30 to 70 V; HV NPN transistor; breakdown voltages; high current gain; high voltage device; lateral DMOS structure; lateral bipolar transistor; low cost power BiCMOS technology; BiCMOS integrated circuits; Bipolar transistors; Breakdown voltage; CMOS process; CMOS technology; Costs; Immune system; MOSFETs; Sheet materials; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509483
