Title :
Undamped inductive switching of integrated quasi-vertical DMOSFETs
Author :
Constapel, Rainer ; Shekar, M.S. ; Williams, Richard K.
Author_Institution :
Res. Inst., Daimler-Benz AG, Frankfurt, Germany
Abstract :
This investigation explores the unclamped inductive switching (UIS) performance and failure mechanisms of 60 V quasi-vertical N-channel DMOSFETs through measurement and numerical device simulation. The non-uniform current distributions that arise inside the DMOS during UIS are analyzed and the effects of local self-heating are investigated
Keywords :
current distribution; failure analysis; field effect transistor switches; power MOSFET; power field effect transistors; power semiconductor switches; semiconductor device models; semiconductor device reliability; switching; 60 V; N-channel DMOSFET; failure mechanisms; integrated quasi-vertical DMOSFETs; local self-heating; nonuniform current distributions; numerical device simulation; undamped inductive switching; Circuit testing; Current measurement; Electric breakdown; Electrical resistance measurement; Inductance measurement; Inductors; Magnetic field measurement; Power measurement; Switches; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509485
