Title :
Integration of copper and fluorosilicate glass for 0.18 μm interconnections
Author :
Barth, E.P. ; Ivers, T.H. ; McLaughlin, P.S. ; McDonald, A. ; Levine, E.N. ; Greco, S.E. ; Fitzsimmons, J. ; Melville, I. ; Spooner, T. ; DeWan, C. ; Chen, Xia ; Manger, D. ; Nye, H. ; McGahay, V. ; Biery, G.A. ; Goldblatt, R.D. ; Chen, T.C.
Author_Institution :
Semicond. Res. & Dev. Center, IBM Microelectron., Hopewell Junction, NY, USA
Abstract :
The integration of dual damascene copper with fluorosilicate glass (FSC) at the 0.18 μm technology node is described. The BEOL structure has been implemented for an advanced CMOS technology, and along with an SOI FEOL is being used for high performance logic and SRAM devices. Reliability and yield is shown to be equivalent to a similar technology without FSG. Key considerations in the development of this technology are presented
Keywords :
CMOS integrated circuits; copper; dielectric thin films; fluoride glasses; integrated circuit interconnections; 0.18 micron; BEOL integration; CMOS technology; SOI FEOL; SRAM device; dual damascene copper interconnection; fluorosilicate glass low-k dielectric film; interlevel dielectric; logic device; reliability; yield; CMOS technology; Chemical technology; Copper; Damascene integration; Dielectric constant; Dielectric measurements; Dielectrics and electrical insulation; Glass; Optical films; Stability;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854330
