Title :
Copper dual damascene integration using organic low k material: construction architecture comparison
Author :
Morand, Y. ; Assous, M. ; Berruyer, P. ; Cochet, M. ; Demolliens, O. ; Fayolle, M. ; Louis, D. ; Passemard, G. ; Roman, A. ; Verove, C. ; Trouiller, Y.
Author_Institution :
STMicroelectron., Grenoble, France
Abstract :
This paper presents three integration schemes of copper with a pure organic low k material (SiLKTM, Dow Chemical Co., k=2.8). We will compare two trench first architectures, leading to a self or not self aligned structure, with the more conventional self aligned “Via First at Via Level” structure. The limitations of the self aligned structures are discussed by comparison with results obtained with SiO2
Keywords :
copper; dielectric thin films; integrated circuit interconnections; organic compounds; Cu; SiLK; Via First at Via Level structure; copper dual damascene interconnection; interlevel dielectric; organic low-k dielectric film; process integration; self-aligned structure; trench architecture; Building materials; Capacitance; Copper; Damascene integration; Etching; Organic materials; Polymers; Resists; Silicon compounds; Telecommunications;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854332
