• DocumentCode
    2193409
  • Title

    Copper dual damascene integration using organic low k material: construction architecture comparison

  • Author

    Morand, Y. ; Assous, M. ; Berruyer, P. ; Cochet, M. ; Demolliens, O. ; Fayolle, M. ; Louis, D. ; Passemard, G. ; Roman, A. ; Verove, C. ; Trouiller, Y.

  • Author_Institution
    STMicroelectron., Grenoble, France
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    225
  • Lastpage
    227
  • Abstract
    This paper presents three integration schemes of copper with a pure organic low k material (SiLKTM, Dow Chemical Co., k=2.8). We will compare two trench first architectures, leading to a self or not self aligned structure, with the more conventional self aligned “Via First at Via Level” structure. The limitations of the self aligned structures are discussed by comparison with results obtained with SiO2
  • Keywords
    copper; dielectric thin films; integrated circuit interconnections; organic compounds; Cu; SiLK; Via First at Via Level structure; copper dual damascene interconnection; interlevel dielectric; organic low-k dielectric film; process integration; self-aligned structure; trench architecture; Building materials; Capacitance; Copper; Damascene integration; Etching; Organic materials; Polymers; Resists; Silicon compounds; Telecommunications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    0-7803-6327-2
  • Type

    conf

  • DOI
    10.1109/IITC.2000.854332
  • Filename
    854332
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2193409