Title :
Self-shielding: new high-voltage inter-connection technique for HVICs
Author :
Fujihira, Tatsuhiko ; Yano, Yukio ; Obinata, Shigeyuki ; Kumagai, Naoki ; Sakurai, Kenya
Author_Institution :
Fuji Electr. Co. Ltd., Matsumoto, Japan
Abstract :
A new, cost-effective, high-voltage inter-connection technique for HVICs, named Self-Shielding, is proposed. To avoid the lowering of breakdown voltage of high-voltage devices affected by the electric potential of overlying interconnections, self-shielding technique utilizes only the native PN-junction structures of high-voltage devices themselves. No additional shielding structure is required even to realize a very high-voltage IC above 1000 V. Design concept and device structures are presented together with the experimental results on the operation of self-shielded 1200 V level-shifters
Keywords :
electric breakdown; integrated circuit interconnections; isolation technology; power integrated circuits; shielding; 1000 V; 1200 V; HV interconnection technique; HVICs; breakdown voltage; high-voltage devices; self-shielding; Breakdown voltage; Costs; Electric potential; Insulated gate bipolar transistors; Insulation; Integrated circuit interconnections; Power supplies; Production facilities; Research and development; Timing;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509488