Title :
Microstructure characterization of metal interconnects and barrier layers: status and future
Author :
Zschech, Ehrenfhed ; Besser, Paul R.
Author_Institution :
Mater. Anal. Dept., AMD Saxony Manuf. GmbH, Dresden, Germany
Abstract :
Metal interconnect and barrier characterization are challenged by reduced feature sizes, advanced materials, and new technologies. Microstructure characterization of new materials is done for thin films deposited on flat substrates and for on-chip interconnect structures. In this paper, both Al and Cu metallizations and respective barriers are discussed. Analytical requirements and advanced techniques for interconnect and barrier microstructure characterization will be covered. Specific topics will be composition and structure of interconnects and barriers, grain size, texture and stress in interconnect lines
Keywords :
diffusion barriers; grain size; integrated circuit interconnections; internal stresses; texture; Al; Cu; barrier layer; grain size; mechanical stress; metal interconnect; microstructure; texture; thin film; Copper; Dielectric materials; Electron beams; Grain boundaries; Inorganic materials; Integrated circuit interconnections; Intermetallic; Microstructure; Tin; Wire;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854334
