Title :
Extension of copper plating to 0.13 μm nodes by pulse-modulated plating
Author :
Gandikota, Srinivas ; Duboust, Alain ; Neo, Siew ; Chen, Liang-Yuh ; Cheung, Robin ; Carl, Dan
Author_Institution :
Appl. Mater., Santa Clara, CA, USA
Abstract :
The electro-chemical deposition of copper can carried out by normal DC plating or using pulse plating approach. The superfill for gap fill can be achieved using either of these approaches-DC plating or pulse plating. The pulse plating approach has been observed to show advantages of greater tolerance to seed layer morphology besides controlled planarity, with no major detrimental effects on electrical yield or other film properties
Keywords :
copper; electroplating; integrated circuit interconnections; 0.13 micron; Cu; copper interconnect; electrical yield; electrochemical deposition; gap filling; planarity; pulse modulated plating; seed layer morphology; superfill; Atomic layer deposition; Copper; Electric resistance; Electrical resistance measurement; Electromigration; Morphology; Pulse measurements; Reflectivity; Sputtering; Thickness measurement;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854336
