Title :
CVD Cu technology development for advanced Cu interconnect applications
Author :
Lee, Cheng-Hong ; Shen, Kuei-Hung ; Ku, Tzu-Kun ; Luo, ICheng-Hung ; Chia-Chun Tao ; Chou, Hung-Wen ; Hsia, Chin
Author_Institution :
Deep Submicron Technol. Div., ERSO, ITRI, Hsinchu, Taiwan
Abstract :
An advanced chemical vapor deposition Cu technology has been developed for 0.13 μm Cu interconnect generation and beyond. Aggressive Cu via filling capability was successfully proved by CVD direct fill or CVD/ECD integration for via CD<0.1 μm with AR>10. High via chain (20 K) yield and low resistance (<0.9Ω/via) of 0.28 μm borderless via were also achieved. Via filling and integration related issues including adhesion, texture, and CMP compatibility were also studied and resolved. Excellent filling capability, adequate adhesion and good (111) texture of the proposed CVD Cu based process exhibit superior extendibility toward sub-0.13 μm technology node
Keywords :
CVD coatings; copper; integrated circuit interconnections; 0.13 micron; Cu; adhesion; chemical vapor deposition; copper interconnect; electrical resistance; process integration; texture; via filling; yield; Adhesives; Atherosclerosis; Chemical technology; Copper; Filling; Integrated circuit interconnections; Rough surfaces; Surface morphology; Surface roughness; Temperature dependence;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854337
