CVD Cu technology development for advanced Cu interconnect applications

Author

Lee, Cheng-Hong ; Shen, Kuei-Hung ; Ku, Tzu-Kun ; Luo, ICheng-Hung ; Chia-Chun Tao ; Chou, Hung-Wen ; Hsia, Chin

Author_Institution

Deep Submicron Technol. Div., ERSO, ITRI, Hsinchu, Taiwan

fYear

2000

fDate

2000

Firstpage

242

Lastpage

244

Abstract

An advanced chemical vapor deposition Cu technology has been developed for 0.13 μm Cu interconnect generation and beyond. Aggressive Cu via filling capability was successfully proved by CVD direct fill or CVD/ECD integration for via CD<0.1 μm with AR>10. High via chain (20 K) yield and low resistance (<0.9Ω/via) of 0.28 μm borderless via were also achieved. Via filling and integration related issues including adhesion, texture, and CMP compatibility were also studied and resolved. Excellent filling capability, adequate adhesion and good (111) texture of the proposed CVD Cu based process exhibit superior extendibility toward sub-0.13 μm technology node

Keywords

CVD coatings; copper; integrated circuit interconnections; 0.13 micron; Cu; adhesion; chemical vapor deposition; copper interconnect; electrical resistance; process integration; texture; via filling; yield; Adhesives; Atherosclerosis; Chemical technology; Copper; Filling; Integrated circuit interconnections; Rough surfaces; Surface morphology; Surface roughness; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854337

Filename

854337