Title :
Inline monitoring of multi-level dual inlaid copper interconnect technologies
Author :
Kolagunta, Venkat ; Smith, Brad ; Islam, Rabiul ; Angyal, Matt ; Mendonca, John ; Bartaszewicz, Sarah ; Duraiswami, Nedu ; Jana, Pradeep ; Veeraraghavan, Surya ; Venkatesan, Suresh
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
A six level manufacturable copper interconnect technology using metal-first dual inlaid integration for a 0.2 μm node is discussed. Various aspects of the technology can be monitored using specially designed resistance measurement structures. Relationship between: (i) inline electrical measurements, (ii) inline physical measurements and (iii) final product characteristics are analyzed and used to window the process flow. This interconnect system can be used to produce microprocessors, SRAMs, and digital signal processors
Keywords :
copper; electric resistance measurement; integrated circuit interconnections; process monitoring; 0.2 micron; Cu; in-line monitoring; multilevel dual inlaid copper interconnect technology; process window; resistance measurement; Copper; Dielectrics; Digital signal processors; Electric variables measurement; Electrical resistance measurement; Etching; Fluid flow measurement; Integrated circuit interconnections; Microprocessors; Monitoring;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854338
