Title :
Complete-abrasive-free process for copper damascene interconnection
Author :
Kondo, Seiichi ; Sakuma, Noriyuki ; Homma, Yoshio ; Goto, Yasushi ; Ohashi, Naofumi ; Yamaguchi, Hizuru ; Owada, Nobuo
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
Complete-abrasive-free process for copper (Cu) damascene interconnection has been developed. The process is a combination of a newly developed abrasive-free chemical polishing (AFP) of Cu and dry etching of a barrier metal layer. Complete stop-on-barrier characteristics of Cu polishing are attained by using the new polishing agent and a polyurethane polishing pad. This combination produces a very clean, scratch-free, anticorrosive polished surface, and the total depth of erosion and dishing is reduced to less than one fifth of that produced by conventional slurries even after 100% over polishing. And it is shown that the developed AFP significantly reduces both Cu line resistance and its deviation
Keywords :
copper; integrated circuit interconnections; polishing; sputter etching; Cu; abrasive-free chemical polishing; barrier metal layer; copper damascene interconnection; dry etching; line resistance; polyurethane pad; stop-on-barrier characteristics; Abrasives; Chemical processes; Copper; Degradation; Dry etching; Friction; Page description languages; Protection; Slurries; Surface resistance;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854340
