Title :
GaAs and InP-based monolithically integrated transmitters and photoreceivers
Author :
Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA
Abstract :
High-performance GaAs and InP-based components are required for the development long- and short-distance communication links. Our work in the development of monolithically integrated transmitters and photoreceivers is described, with reference to ongoing work elsewhere. Challenges in terms of materials incompatibility and device design and intrinsic and extrinsic limits of device and circuit performance are discussed.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; laser beam applications; optical communication equipment; optical modulation; optical receivers; semiconductor lasers; transmitters; GaAs; GaAs-based components; InP; InP-based components; OEIC; circuit performance; device design; long-distance communication links; materials incompatibility; monolithically integrated photoreceivers; monolithically integrated transmitters; optical links; short-distance communication links; Circuit optimization; Gallium arsenide; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335293
