2.5 kV-1000 A power pack IGBT (high power flat-packaged RC-IGBT)

Author

Takahashi, Yoshikazu ; Yoshikawa, Koh ; Soutome, Masayuki ; Fujii, Takeshi ; Ichijyou, Masami ; Seki, Yasukazu

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

1996

fDate

20-23 May 1996

Firstpage

299

Lastpage

302

Abstract

A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and PWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current I_c=1000 A, T_j=125°C, and the turn-off capability of over 5×I_c

Keywords

insulated gate bipolar transistors; power supplies to apparatus; semiconductor device packaging; semiconductor device testing; 1000 A; 125 C; 2.5 kV; 4.5 V; DC bias test; PWD chips; collector current; heat shock test; high power flat-packaged RC-IGB; industrial and traction use; low thermal impedance; on-state voltage; power cycling test; power pack IGBT; reliability; side cooling; traction use; turn-off capability; Assembly; Cooling; Electrodes; Impedance; Industrial control; Insulated gate bipolar transistors; Plastic packaging; Production facilities; Research and development; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509502

Filename

509502