Author :
Demolliens, O. ; Morand, Y. ; Fayolle, M. ; Cochet, M. ; Assous, M. ; Feldis, H. ; Lonis, D. ; Royer, J.C. ; Gobil, Y. ; Passemard, G. ; Maury, P. ; Jourdan, F. ; Cordeau, M. ; Morel, T. ; Perroud, L. ; Ulmer, L. ; Lugard, J.F. ; Renaud, D.
Author_Institution :
LETI, CEA Technol. Avancees, Grenoble, France
Abstract :
This paper describes the integration of Copper with a SiOC/AirGap in a 0.18 μm Double Level Metal Interconnect. A new concept is presented to achieve this ultimate interconnect scheme, and its feasibility is demonstrated by a 55% reduction of the total capacitance measured versus a Cu/SiO2 interconnect
Keywords :
air gaps; copper; integrated circuit interconnections; silicon compounds; 0.18 micron; Cu-SiOC; capacitance; copper-SiOC-air gap integration; double level metal interconnect; low-k dielectric; Capacitance measurement; Copper; Dielectric materials; Dielectric measurements; Permittivity measurement; Research and development; Silicon compounds; Stability; Telecommunications; Tin;
