• DocumentCode
    2193791
  • Title

    Copper-SiOC-AirGap integration in a double level metal interconnect

  • Author

    Demolliens, O. ; Morand, Y. ; Fayolle, M. ; Cochet, M. ; Assous, M. ; Feldis, H. ; Lonis, D. ; Royer, J.C. ; Gobil, Y. ; Passemard, G. ; Maury, P. ; Jourdan, F. ; Cordeau, M. ; Morel, T. ; Perroud, L. ; Ulmer, L. ; Lugard, J.F. ; Renaud, D.

  • Author_Institution
    LETI, CEA Technol. Avancees, Grenoble, France
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    276
  • Lastpage
    277
  • Abstract
    This paper describes the integration of Copper with a SiOC/AirGap in a 0.18 μm Double Level Metal Interconnect. A new concept is presented to achieve this ultimate interconnect scheme, and its feasibility is demonstrated by a 55% reduction of the total capacitance measured versus a Cu/SiO2 interconnect
  • Keywords
    air gaps; copper; integrated circuit interconnections; silicon compounds; 0.18 micron; Cu-SiOC; capacitance; copper-SiOC-air gap integration; double level metal interconnect; low-k dielectric; Capacitance measurement; Copper; Dielectric materials; Dielectric measurements; Permittivity measurement; Research and development; Silicon compounds; Stability; Telecommunications; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    0-7803-6327-2
  • Type

    conf

  • DOI
    10.1109/IITC.2000.854347
  • Filename
    854347
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2193791