A new low temperature diffusion bonding technology between large-area, high-power devices and internal Mo electrodes using Au-Al films

Author

Onuki, Jin ; Satou, Mitsuo ; Murakami, Susumu ; Morita, Toshiaki ; Yatsuo, Tsutomu

Author_Institution

Res. Lab., Hitachi Ltd., Ibaraki, Japan

fYear

1996

fDate

20-23 May 1996

Firstpage

317

Lastpage

320

Abstract

To realize large-area, high-power devices, low temperature diffusion bonding between Al electrodes on both sides of the device and Au-plated Mo internal electrode foils has been investigated. Bonding was feasible below 573 K due to the formation of Au-Al intermetallic compound. Substantial reduction of the mounting force while keeping contact uniform was also possible. Reliability of the bond type devices is predicted from metallurgical viewpoint

Keywords

aluminium alloys; electrodes; gold alloys; metallic thin films; molybdenum; semiconductor device metallisation; semiconductor technology; thermal diffusion; 573 K; Al electrodes; Au-Al; Au-Al films; Au-Al intermetallic compound; Au-plated Mo internal electrode foils; AuMo-Al; Si power device; Si-Mo; high-power devices; internal Mo electrodes; low temperature diffusion bonding; low temperature diffusion bonding technology; mounting force; reliability; uniformity; Artificial intelligence; Bonding forces; Cathodes; Contact resistance; Diffusion bonding; Electric variables; Electrodes; Intermetallic; Packaging; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509506

Filename

509506