Title :
Analysis of direct wafer bond IGBTs with heavily doped N+ buffer layer
Author :
Tu, S.L. ; Tam, Gordon ; Tam, Pak ; Tsoi, H.-Y. ; Taomoto, Aileen
Author_Institution :
Adv. Custom Technol. Center, Motorola Inc., Mesa, AZ, USA
Abstract :
High-speed IGBTs fabricated using direct wafer bonding and implanted N+ buffer layer are described and analyzed in this paper. The trade-off between on-state voltage drop and turn-off fall time can be controlled by varying the N+ implant dose prior to the wafer bonding process. 800 V IGBTs with switching time less than 100 nanoseconds and V ce(sat) as low as 1.4 V at 100 A/cm2 have been obtained. This excellent performance is achieved without utilizing any conventional lifetime control techniques
Keywords :
heavily doped semiconductors; insulated gate bipolar transistors; ion implantation; power semiconductor switches; semiconductor device models; wafer bonding; 100 ns; 800 V; N+ implant dose; direct wafer bond IGBTs; heavily doped N+ buffer layer; on-state voltage drop; switching time; turn-off fall time; Buffer layers; Doping; Electron devices; Implants; Insulated gate bipolar transistors; Insulation; Spontaneous emission; Temperature; Voltage; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509511
