Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application

Author

Takahashi, H. ; Haruguchi, H. ; Hagino, H. ; Yamada, T.

Author_Institution

Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan

fYear

1996

fDate

20-23 May 1996

Firstpage

349

Lastpage

352

Abstract

A new device concept, called the Carrier Stored Trench-Gate Bipolar Transistor (CSTBT) is reported for the first time. The CSTBT forms the n layer under p base between trenches, the n layer stores carriers; as aesult, the carrier distribution of the CSTBT becomes that of the diode. We examined the performance of the CSTBT by simulation and experiment in the case of the blocking voltage of 1700 V, compared to the simple trench IGBT (TIGBT) and the PiN diode. This confirmed the CSTBT is superior to the TIGBT, and the on-state voltage of the CSTBT is almost same as the Vf of the PiN diode. By the fabricated CSTBT, on-state voltage is 1.9 V at 50 A/cm², turn-off time of resistive load switching is about 300 nsec. We realized turn-off current capability of the CSTBT above 250 A/cm²

Keywords

carrier density; characteristics measurement; insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; 1.9 V; 1700 V; 300 ns; CSTBT; IGBTs; blocking voltage; carrier distribution; carrier stored trench-gate bipolar transistor; high voltage application; on-state voltage; power device; resistive load switching; turn-off current capability; turn-off time; Bipolar transistors; Diodes; Electrodes; Insulated gate bipolar transistors; MOSFETs; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509513

Filename

509513