An analysis and improvement of destruction immunity during reverse recovery for high voltage planar diodes under high dIrr/dt condition

Author

Tomomatsu, Y. ; Suekawa, E. ; Enjyoji, T. ; Takeda, M. ; Kondoh, H. ; Hagino, H. ; Yamada, T.

Author_Institution

Fukuryo Semicon Eng. Corp., Fukuoka, Japan

fYear

1996

fDate

20-23 May 1996

Firstpage

353

Lastpage

356

Abstract

Computer simulation for reverse recovery characteristics of a planar diode revealed that local heating occurred at the corner of the anode even when a surge voltage across the diode was lower than its static breakdown voltage. Analysis for origin of local heating resulted in a design principle for improving destruction immunity of the diode. Diodes designed according to the present principle showed excellent destruction immunity under high dIrr/dt condition

Keywords

electric breakdown; impact ionisation; power semiconductor diodes; power semiconductor switches; semiconductor device reliability; surge protection; dIrr/dt condition; destruction immunity; high voltage planar diodes; local heating; reverse recovery; static breakdown voltage; surge voltage; Analytical models; Anodes; Breakdown voltage; Diodes; Explosions; Performance analysis; Silicon; Surges; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509514

Filename

509514