Title :
An analysis and improvement of destruction immunity during reverse recovery for high voltage planar diodes under high dIrr/dt condition
Author :
Tomomatsu, Y. ; Suekawa, E. ; Enjyoji, T. ; Takeda, M. ; Kondoh, H. ; Hagino, H. ; Yamada, T.
Author_Institution :
Fukuryo Semicon Eng. Corp., Fukuoka, Japan
Abstract :
Computer simulation for reverse recovery characteristics of a planar diode revealed that local heating occurred at the corner of the anode even when a surge voltage across the diode was lower than its static breakdown voltage. Analysis for origin of local heating resulted in a design principle for improving destruction immunity of the diode. Diodes designed according to the present principle showed excellent destruction immunity under high dIrr/dt condition
Keywords :
electric breakdown; impact ionisation; power semiconductor diodes; power semiconductor switches; semiconductor device reliability; surge protection; dIrr/dt condition; destruction immunity; high voltage planar diodes; local heating; reverse recovery; static breakdown voltage; surge voltage; Analytical models; Anodes; Breakdown voltage; Diodes; Explosions; Performance analysis; Silicon; Surges; Temperature dependence; Temperature distribution;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509514
