DocumentCode
2193996
Title
A 60-GHz LNA using commercially available PM HEMTs for intersatellite and mobile communications
Author
Lunden, O.-P. ; Sipila, M. ; Jenu, M.
Author_Institution
Tech. Res. Centre of Finland, Espoo, Finland
fYear
1994
fDate
23-27 May 1994
Firstpage
1341
Abstract
A 60-GHz low noise amplifier using commercially available 0.25-/spl mu/m pseudomorphic HEMTs has been developed. The four-stage amplifier has a noise figure of 4.8 dB and a gain of 15.1 dB at 60.2 GHz.<>
Keywords
high electron mobility transistors; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; microwave links; mobile radio systems; satellite relay systems; semiconductor device noise; 0.25 micron; 15.1 dB; 4.8 dB; 60 to 60.2 GHz; EHF; LNA; MM-wave IC; commercially available PM HEMTs; four-stage amplifier; intersatellite communications; low noise amplifier; mobile communications; pseudomorphic HEMTs; Gain; HEMTs; Low-noise amplifiers; MODFETs; Noise figure; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335302
Filename
335302
Link To Document